DocumentCode :
1664635
Title :
Intrinsic sensitivity of CdZnTe semiconductors for digital radiographic imaging
Author :
Giakos, G.C. ; Guntupalli, R. ; Shah, N. ; Vedantham, S. ; Suryanarayanan, S. ; Chowdhury, S. ; Patnekar, N. ; Sumrain, S. ; Mehta, K.
Author_Institution :
Imaging Devices, Sensors & Intelligence Based Sensor Fusion Lab., Akron Univ., OH, USA
Volume :
1
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
475
Abstract :
The intrinsic sensitivity of Cd1-xZnxTe semiconductor detectors have been theoretically modeled and experimentally measured, within the X-ray diagnostic energy range. The purpose of this study is to optimize the detector signal parameters of these solid state ionization devices for digital imaging applications. The experimental results of this study indicate that Cd1-xZnxTe detectors exhibit good intrinsic sensitivity.
Keywords :
II-VI semiconductors; X-ray detection; cadmium compounds; diagnostic radiography; image enhancement; zinc compounds; Cd1-xZnxTe; X-ray diagnostic energy range; detector signal parameters; digital radiographic imaging; image enhancement; intrinsic sensitivity; solid state ionization devices; Diagnostic radiography; Energy measurement; Optical imaging; Signal detection; Solid state circuits; Tellurium; X-ray detection; X-ray detectors; X-ray imaging; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Instrumentation and Measurement Technology Conference, 2002. IMTC/2002. Proceedings of the 19th IEEE
ISSN :
1091-5281
Print_ISBN :
0-7803-7218-2
Type :
conf
DOI :
10.1109/IMTC.2002.1006888
Filename :
1006888
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1664635
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