DocumentCode :
1664657
Title :
3D electromagnetic and electrical simulation of HgCdTe pixel arrays
Author :
Keasler, Craig ; Bellotti, Enrico
Author_Institution :
Electr. & Comput. Eng. Dept., Boston Univ., Boston, MA, USA
fYear :
2011
Firstpage :
199
Lastpage :
200
Abstract :
We have investigated the combined electromagnetic and electrical response of HgCdTe based pixel detector arrays with different geometries. We have computed the propagation of the optical signal in the detector structure by solving Maxwell´s curl equations using a finite-difference time-domain approach. From the field distribution inside the device, we have evaluated the optical carrier generation rate. Using this information in a 3D numerical model based on drift-diffusion, we have computed the quantum efficiency and photo-response of a number of pixel geometries. Specifically, we have analyzed the response of both mesa type and planar detector arrays with and without CdZnTe substrate. Furthermore, the electromagnetic response has also been evaluated for different metal contact dimensions and configurations. It is found that for mesa type arrays without the substrate, significant reflection effects take place in the device that lead to resonance peaks in the photo-response.
Keywords :
II-VI semiconductors; Maxwell equations; cadmium compounds; finite difference time-domain analysis; integrated optics; light propagation; mercury compounds; optical arrays; photodetectors; reflectivity; 3D electrical simulation; 3D electromagnetic simulation; 3D numerical model; CdZnTe; HgCdTe; Maxwell curl equations; drift diffusion; field distribution; finite-difference time-domain method; mesa type detector arrays; metal contact; optical carrier generation; optical signal propagation; photoresponse; pixel detector arrays; planar detector arrays; quantum efficiency; reflection effects; Detectors; Finite difference methods; Geometry; Substrates; Time domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location :
Rome
ISSN :
2158-3234
Print_ISBN :
978-1-61284-876-1
Electronic_ISBN :
2158-3234
Type :
conf
DOI :
10.1109/NUSOD.2011.6041112
Filename :
6041112
Link To Document :
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