Title :
Selective-area growth of Ge and Ge/SiGe quantum wells in 3 μm silicon-on-insulator waveguides
Author :
Claussen, Stephanie A. ; Balram, Krishna C. ; Fei, Edward T. ; Kamins, Theodore I. ; Harris, James S. ; Miller, David A B
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We demonstrate a robust process for growing high-quality bulk Ge and Ge/SiGe quantum wells in selected areas of 3 μm thick silicon-on-insulator waveguides, eliminating sidewall growth and hence facilitating low-insertion-loss optical modulators.
Keywords :
Ge-Si alloys; electro-optical modulation; electroabsorption; elemental semiconductors; germanium; optical losses; optical materials; optical waveguides; semiconductor growth; semiconductor quantum wells; silicon-on-insulator; substrates; Ge; Ge-SiGe; Si; low-insertion-loss optical modulators; quantum wells; selective-area growth; silicon-on-insulator waveguides; size 3 mum; substrate preparation process; Epitaxial growth; Fabrication; Modulation; Optical waveguides; Silicon; Silicon germanium; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
