Title :
‘Field Balanced’ SG-RSO structure showing tremendous potential for low voltage trench MOSFETs
Author :
Tong, C.F. ; Mawby, P.A. ; Covington, J.A.
Author_Institution :
Sch. of Eng., Univ. of Warwick, Coventry, UK
Abstract :
This paper presents a 30V range `Field Balanced´ Split-Gate RSO (Resurf Stepped Oxide) MOSFET showing extremely low Qgd of 1.0 nC mm-2for the first time. By introducing a low doped region on an optimised 30V Split-Gate RSO MOSFET, the Figure of Merit (FOM) improves from 8.09 mOmega nC to around 6.40 mOmega nC. From this investigation, it has been demonstrated that the `Field Balanced´ on a a Split-Gate structure can give a good RdsON vs Qgd trade off. The exceptionally low Qgd will allow the `Field Balanced´ structure to achieve a good efficiency even in high switching frequency converter.
Keywords :
MOSFET; low-power electronics; power semiconductor devices; switching convertors; field balanced SG-RSO structure; high switching frequency converter; low voltage trench MOSFET; power semiconductor device; resurf stepped oxide; voltage 30 V; Electric breakdown; Low voltage; MOSFETs; Power engineering and energy; Power semiconductor devices; Split gate flash memory cells; Switching converters; Switching frequency; Switching loss; Uniform resource locators; MOSFET; Power semiconductor device; Simulation;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
