Title :
Modeling the effects of interface traps on passive quenching of a Ge/Si Geiger mode avalanche photodiode
Author :
Hayes, John M. ; Gity, Farzan ; Corbett, Brian ; Morrison, Alan P.
Author_Institution :
Photonics Centre, Tyndall Nat. Inst., Cork, Ireland
Abstract :
The influence of interface donor and acceptor traps on the behavior of Ge/Si separate absorption, charge and multiplication (SACM) Geiger mode avalanche photodiodes (GM-APDs) under passive quenching is modeled. The effects of different trap types on the quenching behavior are investigated in this paper for the first time. Our results show that trap type and trap density significantly influence the APD quenching time and ability to quench for a particular quenching resistor.
Keywords :
Ge-Si alloys; avalanche photodiodes; interface states; radiation quenching; semiconductor materials; Ge-Si; Geiger mode avalanche photodiode; interface acceptor traps; interface donor traps; light absorption; passive quenching; quenching resistor; trap density; Avalanche photodiodes; Electric breakdown; Electron traps; Mathematical model; Photonics; Semiconductor process modeling; Silicon; Avalanche photodiode (APD); Geiger mode (GM); germanium; interface trap; passive quenching; silicon;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-61284-876-1
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2011.6041115
