Title :
Nanofabrication of quantum dots on InP by in-situ etching and selective growth
Author :
Huang, Y. ; Kim, T. ; Garrod, T. ; Mawst, L.J. ; Xiong, S. ; Nealey, P.F. ; Schulte, K. ; Kuech, T.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin - Madison, Madison, WI, USA
Abstract :
Diblock copolymer lithography followed by selective growth is used for the nanofabrication of InGaAs quantum dots (QDs) on InP substrate. Stronger photoluminescence intensity is observed when in-situ CBr4 etching is employed prior to QD growth.
Keywords :
III-V semiconductors; MOCVD; etching; gallium arsenide; indium compounds; nanofabrication; nanopatterning; photoluminescence; semiconductor growth; semiconductor quantum dots; InGaAs; InP; MOCVD; diblock copolymer lithography; in-situ etching; indium gallium arsenide quantum dots; indium phosphide substrate; metalorganic chemical vapor deposition; nanofabrication; nanopatterning; photoluminescence intensity; selective growth; Etching; Indium phosphide; MOCVD; Optical surface waves; Substrates; Surface waves;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
