Analysis on the potential of Silicon Carbide MOSFETs and other innovative semiconductor technologies in the photovoltaic branch

Author

Araújo, Samuel Vasconcelos ; Zacharias, Peter

Author_Institution

Centre of Competence for Distrib. Electr. Power Technol., Univ. of Kassel, Kassel, Germany

fYear

2009

Firstpage

1

Lastpage

10

Abstract

Within the framework of photovoltaic systems connected to the grid, the potential of innovative semiconductor technologies with special focus on SiC devices will be analyzed. The properties of a SiC D-MOSFET will be experimentally examined firstly as a discrete element and then in a laboratory prototype of a highly efficient inverter circuit. The gain on efficiency and possible increase on the switching frequency will be discussed.

Keywords

MOSFET; invertors; photovoltaic power systems; silicon compounds; wide band gap semiconductors; SiC D-MOSFET; SiC devices; innovative semiconductor technologies; inverter circuit; photovoltaic systems; silicon carbide; switching frequency; Conducting materials; Electron mobility; Gallium nitride; MOSFETs; Photovoltaic systems; Semiconductor materials; Silicon carbide; Solar power generation; Thermal conductivity; Voltage; MOSFET; Photovoltaic; Power semiconductor device; Silicon Carbide; Voltage source inverter (VSI);

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2009. EPE '09. 13th European Conference on

Conference_Location

Barcelona

Print_ISBN

978-1-4244-4432-8

Electronic_ISBN

978-90-75815-13-9

Type

conf

Filename

5278904