Title :
Electro-optical characteristics of separate absorption and multiplication GaN avalanche photodiode
Author :
Wang, X.D. ; Hu, W.D. ; Chen, X.S. ; Xu, J.T. ; Li, X.Y. ; Lu, W.
Author_Institution :
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
Abstract :
The fabrication and electro-optical characteristics for separate absorption and multiplication GaN avalanche photodiode have been presented. The multiplication gain as a function of reverse bias at room temperature is also obtained. It is found that multiplication gain monotonically increases with increasing reverse bias, high multiplication gain of 3×105 at 110V is achieved.
Keywords :
III-V semiconductors; avalanche photodiodes; electro-optical effects; gallium compounds; light absorption; optical fabrication; photodetectors; wide band gap semiconductors; GaN; electro-optical effects; light absorption; monotonic multiplication gain; multiplication avalanche photodiode; optical fabrication; temperature 293 K to 298 K; Absorption; Avalanche photodiodes; Dark current; Gallium nitride; Mathematical model; Noise; Numerical models;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-61284-876-1
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2011.6041126
