• DocumentCode
    1664951
  • Title

    Electro-optical characteristics of separate absorption and multiplication GaN avalanche photodiode

  • Author

    Wang, X.D. ; Hu, W.D. ; Chen, X.S. ; Xu, J.T. ; Li, X.Y. ; Lu, W.

  • Author_Institution
    Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
  • fYear
    2011
  • Firstpage
    39
  • Lastpage
    40
  • Abstract
    The fabrication and electro-optical characteristics for separate absorption and multiplication GaN avalanche photodiode have been presented. The multiplication gain as a function of reverse bias at room temperature is also obtained. It is found that multiplication gain monotonically increases with increasing reverse bias, high multiplication gain of 3×105 at 110V is achieved.
  • Keywords
    III-V semiconductors; avalanche photodiodes; electro-optical effects; gallium compounds; light absorption; optical fabrication; photodetectors; wide band gap semiconductors; GaN; electro-optical effects; light absorption; monotonic multiplication gain; multiplication avalanche photodiode; optical fabrication; temperature 293 K to 298 K; Absorption; Avalanche photodiodes; Dark current; Gallium nitride; Mathematical model; Noise; Numerical models;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
  • Conference_Location
    Rome
  • ISSN
    2158-3234
  • Print_ISBN
    978-1-61284-876-1
  • Electronic_ISBN
    2158-3234
  • Type

    conf

  • DOI
    10.1109/NUSOD.2011.6041126
  • Filename
    6041126
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1664951