Simulation of a ridge-type semiconductor laser with selectively proton-implanted cladding layers

A ridge-type semiconductor laser with selectively proton-implanted cladding layers is proposed to make the fabrication process more simple, increase kink level, and decrease threshold current. In this semiconductor laser, horizontal transverse modes are confined by the ridge structure; carrier distributions are controlled by selectively proton-implanted cladding layers. From simulations of lasing characteristics, it is found that the kink level is higher and the threshold current is lower than those of the ridge-type semiconductor lasers with optical anti guiding layers for horizontal transverse modes.