Title :
5.3-ps ECL and 71-GHz static frequency divider in self-aligned SEG SiGe HBT
Author :
Ohue, Eiji ; Hayami, Reiko ; Oda, Katsuya ; Shimamoto, Hiromi ; Washio, Katsuyoshi
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
6/23/1905 12:00:00 AM
Abstract :
An ECL gate with a delay time of 5.3 ps, the fastest yet reported for semiconductor technology, and based on a self-aligned SiGe HBT with an optimized SEG structure was developed. Maximum operating frequency of static frequency divider using this structure is up to 71 GHz
Keywords :
Ge-Si alloys; bipolar logic circuits; delays; emitter-coupled logic; frequency dividers; heterojunction bipolar transistors; logic gates; semiconductor materials; 5.3 ps; 71 GHz; ECL; SiGe; delay time; operating frequency; self-aligned SEG HBT; static frequency divider; Capacitance; Cutoff frequency; Delay; Electrodes; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Optical frequency conversion; Semiconductor films; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957850
