Title :
Towards ultra-dense arrays of VHF NEMS with FDSOI-CMOS active pixels for sensing applications
Author :
Arndt, Gregory ; Dupré, Cecilia ; Arcamone, Julien ; Cibrario, Gérald ; Rozeau, Olivier ; Duraffourg, Laurent ; Ollier, Eric ; Colinet, Eric
Author_Institution :
CEA-LETI-MINATEC, Grenoble, France
Abstract :
This paper presents the first realization of a fully co-integrated single-crystal NEMS resonator and its CMOS electronics on a single chip. The CMOS technol ogy is based on a "home-made" 0.3μm fully depleted (FD) SOI technology. The resonator fabricated from the SOI silicon layer in a top-down front-end VLSI process is actuated thanks to electrostatic forces. The vibrations are detected differentially with two p-doped silicon piezoresistive (PZR) gauges. Details concerning the NEMS-FD SOI CMOS technological process can also be found in [3] while this paper primarily reports on the design of the circuitry and its first electrical measurements.
Keywords :
CMOS integrated circuits; nanoelectromechanical devices; piezoresistive devices; silicon-on-insulator; CMOS electronics; FDSOI-CMOS active pixel; NEMS-FD SOI CMOS technological process; PZR gauge; SOI silicon layer; VHF NEMS; cointegrated single-crystal NEMS resonator; electrical measurement; electrostatic forces; front-end VLSI process; p-doped silicon piezoresistive gauges; sensing application; size 0.3 micron; ultra-dense array; Atmospheric measurements; Atmospheric modeling; CMOS integrated circuits; Nanoelectromechanical systems; Oscillators; Silicon; Transistors;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-0376-7
DOI :
10.1109/ISSCC.2012.6177005
