Title :
Application of normally-off SiC-JFETs in photovoltaic inverters
Author :
Kranzer, Dirk ; Wilhelm, Christian ; Reiners, Florian ; Burger, Bruno
Author_Institution :
Fraunhofer Inst. for Solar Energie Syst. ISE, Freiburg, Germany
Abstract :
In this paper the implementation and the performance of 1200 V / 30 A / 65 mOmega normally-off SiC-JFETs in photovoltaic inverters (PV-inverters) is shown and compared with Si-IGBTs. The JFETs´ low switching energy and on-resistance lead to an improvement of efficiency and a reduction of costs and weight of PV-inverters.
Keywords :
junction gate field effect transistors; photovoltaic power systems; silicon compounds; wide band gap semiconductors; JFET; SiC; current 30 A; decentralized photovoltaic power generation; photovoltaic inverters; voltage 1200 V; Costs; Diodes; Insulated gate bipolar transistors; Inverters; JFETs; MOSFETs; Photovoltaic systems; Safety; Silicon carbide; Solar power generation; Efficiency; Inverter Circuit; Photovoltaic; Silicon Carbide; normally-off JFET;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
