DocumentCode
1665319
Title
Application of normally-off SiC-JFETs in photovoltaic inverters
Author
Kranzer, Dirk ; Wilhelm, Christian ; Reiners, Florian ; Burger, Bruno
Author_Institution
Fraunhofer Inst. for Solar Energie Syst. ISE, Freiburg, Germany
fYear
2009
Firstpage
1
Lastpage
6
Abstract
In this paper the implementation and the performance of 1200 V / 30 A / 65 mOmega normally-off SiC-JFETs in photovoltaic inverters (PV-inverters) is shown and compared with Si-IGBTs. The JFETs´ low switching energy and on-resistance lead to an improvement of efficiency and a reduction of costs and weight of PV-inverters.
Keywords
junction gate field effect transistors; photovoltaic power systems; silicon compounds; wide band gap semiconductors; JFET; SiC; current 30 A; decentralized photovoltaic power generation; photovoltaic inverters; voltage 1200 V; Costs; Diodes; Insulated gate bipolar transistors; Inverters; JFETs; MOSFETs; Photovoltaic systems; Safety; Silicon carbide; Solar power generation; Efficiency; Inverter Circuit; Photovoltaic; Silicon Carbide; normally-off JFET;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location
Barcelona
Print_ISBN
978-1-4244-4432-8
Electronic_ISBN
978-90-75815-13-9
Type
conf
Filename
5278924
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