Title :
Modelling two SiGe HBT specific features for circuit simulation
Author :
Paasschens, J.C.J. ; Kloosterman, W.J. ; Havens, R.J.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fDate :
6/23/1905 12:00:00 AM
Abstract :
We present compact model formulations for the description of two effects seen in SiGe HBT´s, but not in pure-Si transistors. One of them is the influence on the Early effect of a graded Ge-content in the base. The other is the neutral base recombination due to the high base doping levels in some SiGe transistors. Both formulations have been implemented as options in a publicly available compact model
Keywords :
Ge-Si alloys; circuit simulation; electron-hole recombination; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; Early effect; SiGe; SiGe HBT; base doping level; circuit simulation; compact model; graded Ge base; neutral base recombination; Bipolar transistors; Circuit simulation; Doping; Electronic mail; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Semiconductor process modeling; Silicon germanium; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957853
