Optical modulation bandwidth enhancement of Heterojunction Bipolar Transistor Lasers using base width variation

In this paper an analysis of a typical Heterojunction Bipolar Transistor Laser (HBTL) with a 160Å quantum-well in the base is developed to describe the Base width effect on optical frequency response and current gain using a charge control model. We have found that base width has an optimized value of about 1000Å for the highest -3db optical bandwidth. It will also be shown that, this procedure can similarly be extended to other Transistor Lasers. Finally It will be mentioned that, the current gain decreases with base width increment like other HBTs.