Title :
Comparison of switching and conducting performance of SiC-JFET and SiC-BJT with a state of the art IGBT
Author :
Franke, W. Toke ; Fuchs, Friedrich W.
Author_Institution :
Inst. of Power Electron. & Electr. Drives, Christian-Albrechts-Univ. of Kiel, Kiel, Germany
Abstract :
Silicon Carbide (SiC) power semiconductors being actually in development are promising devices for the future. To outline their characteristics the switching and conducting performance of a SiC-JFET and a SiC-BJT are investigated and compared to a state of the art Si-IGBT. The power losses, the switching times and the efforts for the driving circuits are investigated. The focus is put on the influence of the junction temperature on the power losses of the investigated devices. Therefore, 1200 V/6 A devices have been used. The BJT and JFET show some advantages concerning their total losses and their temperature range.
Keywords :
insulated gate bipolar transistors; junction gate field effect transistors; power bipolar transistors; silicon compounds; BJT; IGBT; JFET; SiC; current 6 A; junction temperature; power semiconductors; voltage 1200 V; Bipolar transistors; Circuit testing; Diodes; Insulated gate bipolar transistors; Power semiconductor devices; Power semiconductor switches; Silicon carbide; Switching circuits; Temperature; Voltage; Bipolar device; IGBT; JFET; Power semiconductor device; SiC-device; Silicon Carbide;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
