Comparison of switching and conducting performance of SiC-JFET and SiC-BJT with a state of the art IGBT

Author

Franke, W. Toke ; Fuchs, Friedrich W.

Author_Institution

Inst. of Power Electron. & Electr. Drives, Christian-Albrechts-Univ. of Kiel, Kiel, Germany

fYear

2009

Firstpage

1

Lastpage

10

Abstract

Silicon Carbide (SiC) power semiconductors being actually in development are promising devices for the future. To outline their characteristics the switching and conducting performance of a SiC-JFET and a SiC-BJT are investigated and compared to a state of the art Si-IGBT. The power losses, the switching times and the efforts for the driving circuits are investigated. The focus is put on the influence of the junction temperature on the power losses of the investigated devices. Therefore, 1200 V/6 A devices have been used. The BJT and JFET show some advantages concerning their total losses and their temperature range.

Keywords

insulated gate bipolar transistors; junction gate field effect transistors; power bipolar transistors; silicon compounds; BJT; IGBT; JFET; SiC; current 6 A; junction temperature; power semiconductors; voltage 1200 V; Bipolar transistors; Circuit testing; Diodes; Insulated gate bipolar transistors; Power semiconductor devices; Power semiconductor switches; Silicon carbide; Switching circuits; Temperature; Voltage; Bipolar device; IGBT; JFET; Power semiconductor device; SiC-device; Silicon Carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2009. EPE '09. 13th European Conference on

Conference_Location

Barcelona

Print_ISBN

978-1-4244-4432-8

Electronic_ISBN

978-90-75815-13-9

Type

conf

Filename

5278928