Title :
MOS characteristics of N2O-grown and NO-annealed oxynitrides
Author :
Sun, S.C. ; Chen, C.H. ; Lou, J.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A new technique of MOSFET gate dielectric formation by rapid thermal oxidation is proposed. Gate oxynitride was first grown in N2O and then annealed by in-situ rapid thermal NO-nitridation. This approach has the advantage of providing a higher nitrogen accumulation at the Si/SiO2 interface than either pure N2O oxynitride or nitridation of SiO2 in the NO ambient. It is also applicable to a wide range of oxide thicknesses because the initial rapid thermal N2O oxidation rate is not as self-limited as NO oxidation. The resulting gate dielectrics have reduced charge trapping, lower stress-induced leakage current and significant resistance to interface state generation under electrical stress
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; interface states; leakage currents; nitridation; oxidation; rapid thermal processing; MOSFET gate dielectric formation; N2O; N2O growth; NO; NO annealing; Si-SiO2; Si-SiON; Si/SiO2 interface; charge trapping; deep submicron dual-gate CMOS technology; gate oxynitride; in-situ rapid thermal NO nitridation; interface state generation; oxide thicknesses; rapid thermal oxidation; stress-induced leakage current; Dielectrics; Furnaces; MOS capacitors; Nitrogen; Oxidation; Rapid thermal annealing; Rapid thermal processing; Silicon; Thermal loading; Thermal stresses;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499639
