Title :
A highly manufacturable 0.25μm RF technology utilizing a unique SiGe integration
Author :
Johnson, F.S. ; Ai, J. ; Dunn, S. ; El Kareh, B. ; Erdeljac, J. ; John, S. ; Benaissa, K. ; Bellaour, A. ; Benna, B. ; Hodgson, L. ; Hoffleisch, G. ; Hutter, L. ; Jaumann, M. ; Jumpertz, R. ; Mercer, M. ; Nair, M. ; Seitchik, J. ; Shen, C. ; Schiekofer, M
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
A new SiGe integration technique is introduced that allows the low cost integration of a self-aligned 65 GHz SiGe heterojunction bipolar transistor (HBT) with a 0.55dB noise figure (NF) using simple processing steps and a non-selective SiGe epitaxy deposition. The integration technique is presented as part of a 0.25μm production RF technology that includes SiGe NPNs, 14GHz PNPs, very high Q passives, high resistance substrates, drain-extended CMOS (DEMOS) and fully isolated CMOS wells. In addition to component characterization, measurements of fabricated WCDMA circuits are presented that demonstrate low power, low noise circuit operation
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; heterojunction bipolar transistors; integrated circuit noise; low-power electronics; semiconductor epitaxial layers; semiconductor materials; 0.25 micron; 0.55 dB; 14 GHz; 65 GHz; DEMOS; Q passives; RF technology; SiGe; WCDMA circuits; drain extended CMOS; fully isolated CMOS wells; heterojunction bipolar transistor; integration technique; low noise circuit; low power circuit; nonselective epitaxy deposition; Circuits; Costs; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Manufacturing; Noise figure; Noise measurement; Radio frequency; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957856
