Title :
Capacitance characteristics of the MOS structure with Fowler-Nordheim tunneling current
Author :
He, Yandong ; Xu, Mingzhen ; Tan, Changhua ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
Abstract :
In this paper, it was noted that the transient C-t characteristics under high gate voltage was different from the normal one under a lower gate voltage, and that the equilibrium capacitance (C-t) decreased when the applied gate voltage increased. Here, we present a new model that is able to explain the phenomena of a pulsed MOS structure with Fowler-Nordheim tunneling current
Keywords :
MOS capacitors; capacitance; semiconductor device models; semiconductor device reliability; transient analysis; tunnelling; Fowler-Nordheim tunneling current; MOS structure; Si-SiO2; capacitance characteristics; equilibrium capacitance; high gate voltage; low gate voltage; model; polysilicon gate MOS capacitor; pulsed MOS structure; reliability; transient C-t characteristics; Capacitance; Capacitance-voltage characteristics; Channel bank filters; Helium; MOS devices; Microelectronics; Nanoscale devices; Power system transients; Tunneling; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499641
