Title :
Ultra shallow boron base profile with carbon implantation
Author :
Magnée, P. H C ; Kemmeren, A.L.A.M. ; Cowern, N.E.B. ; Slotboom, J.W. ; Havens, R.J. ; Huizing, H.G.A.
Author_Institution :
Philips Res., Leuven, Belgium
fDate :
6/23/1905 12:00:00 AM
Abstract :
Double-polysilicon bipolar junction transistors with an ultra shallow implanted base are fabricated using Ge pre-amorphization. The effect of implanted C, both on suppressing transient enhanced diffusion and on the junction leakage, is studied
Keywords :
bipolar transistors; diffusion barriers; elemental semiconductors; leakage currents; semiconductor device reliability; silicon; Si:Ge,C; bipolar junction transistors; double-polysilicon transistors; junction leakage; leakage currents; pre-amorphization; transient enhanced diffusion; ultra shallow base profile; Amorphous materials; Annealing; Bipolar transistors; Boron; Doping; Furnaces; Germanium; Heterojunction bipolar transistors; Laboratories; Leakage current;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957858
