Title :
Development of a lateral, opposed-contact photoconductive semiconductor switch
Author :
Richardson, M.A. ; Stoudt, D.C. ; Abdalla, M.D. ; Skipper, M.C. ; Schoenberg, J.S.H.
Author_Institution :
Naval Surface Warfare Center, Dahlgren, VA, USA
Abstract :
Photoconductive semiconductor switch (PCSS) development has been performed for many years by various researchers and institutions. The goal of our PCSS development effort is to produce devices with greater hold-off voltage, faster risetimes, and greater lifetime. The PCSS has many applications in pulse power, ranging from ultra-wideband sources to drivers for Q-switches. In this paper the results from a continuing PCSS development effort are reported. Information covered in this work includes PCSS hold-off voltage data for devices switching in different encapsulating dielectric media. Also, a performance comparison of PCSS devices that have been fabricated on different thickness semi-insulating gallium arsenide substrates is made.
Keywords :
photoconducting switches; pulsed power switches; GaAs; Q-switch drivers; encapsulating dielectric media; fast risetimes; hold-off voltage; lateral opposed-contact photoconductive semiconductor switch; long lifetime; pulse power; semi-insulating GaAs substrates; semi-insulating gallium arsenide substrates; ultra-wideband sources; Contacts; Dielectric devices; Dielectric liquids; Dielectric substrates; Gallium arsenide; Laboratories; Photoconducting devices; Sulfur hexafluoride; Switches; Voltage;
Conference_Titel :
Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5498-2
DOI :
10.1109/PPC.1999.825472
