Development of a lateral, opposed-contact photoconductive semiconductor switch

Photoconductive semiconductor switch (PCSS) development has been performed for many years by various researchers and institutions. The goal of our PCSS development effort is to produce devices with greater hold-off voltage, faster risetimes, and greater lifetime. The PCSS has many applications in pulse power, ranging from ultra-wideband sources to drivers for Q-switches. In this paper the results from a continuing PCSS development effort are reported. Information covered in this work includes PCSS hold-off voltage data for devices switching in different encapsulating dielectric media. Also, a performance comparison of PCSS devices that have been fabricated on different thickness semi-insulating gallium arsenide substrates is made.