Title :
A low-power 57-to-66GHz transceiver in 40nm LP CMOS with −17dB EVM at 7Gb/s
Author :
Vidojkovic, Vojkan ; Mangraviti, Giovanni ; Khalaf, Khaled ; Szortyka, Viki ; Vaesen, Kristof ; Van Thillo, Wim ; Parvais, Bertrand ; Libois, Mike ; Thijs, Steven ; Long, John R. ; Soens, Charlotte ; Wambacq, Piet
Author_Institution :
Imec, Heverlee, Belgium
Abstract :
Obtaining sufficient EVM in all four 1.76GHz bandwidth chann1.76GHzels specified by IEEE 802.15.3c and the emerging 802.11ad high-data-rate wireless communication standards for modulations as complex as QAM16 is a challenge. Recently reported implementations are therefore restricted to just 1 or 2 channels. Wireless applications often use digital low-power (LP) CMOS technology to implement single-chip transceivers. The high Vt and the thin metal interconnect layers constrain the mm-Wave circuit performance. This paper presents a digital LP 40nm CMOS 60GHz transceiver (TRX) IC that obtains an EVM better than -17dB in all 4 channels.
Keywords :
CMOS integrated circuits; field effect MIMIC; low-power electronics; quadrature amplitude modulation; radio transceivers; 16QAM modulation; IEEE 802.15.3c; IEEE802.11ad high-data-rate wireless communication standards; bandwidth 1.76 GHz; digital low-power CMOS technology; frequency 57 GHz to 66 GHz; millimetre-wave circuit performance; single-chip transceivers; size 40 nm; thin metal interconnect layers; CMOS integrated circuits; IEEE 802.15 Standards; Mixers; Phase noise; Transceivers; Tuning; Wireless communication;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-0376-7
DOI :
10.1109/ISSCC.2012.6177011
