Title :
A DCS1800/GSM900 RF to digital fully integrated receiver in SiGe 0.35 μm BiCMOS
Author :
Belot, Didier ; Bonhoure, Bruno ; Saias, Daniel ; Bertholet, Nicole
Author_Institution :
STMicroelectronics, Crolles, France
fDate :
6/23/1905 12:00:00 AM
Abstract :
The authors describe a 0.35 μm SiGe BiCMOS RF to digital base band monochip for the DCS1800/GSM900 standard. Linked to this design, a substrate coupling study has been developed in order to prevent a noisy substrate under sensitive analog RF blocks such as Low Noise Amplifiers (LNAs)
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; cellular radio; integrated circuit noise; mixed analogue-digital integrated circuits; radio receivers; semiconductor materials; telecommunication standards; 0.35 micron; 1800 GHz; 900 GHz; BiCMOS RF chip; DCS1800/GSM900 integrated receiver; DCS1800/GSM900 standard; LNA; RFIC; SiGe; SiGe BiCMOS process; fully integrated dual-band receiver; low noise amplifier; sensitive analog RF blocks; substrate coupling; BiCMOS integrated circuits; Distributed control; Germanium silicon alloys; Impedance; Noise figure; Noise measurement; Packaging; Radio frequency; Silicon germanium; Switches;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957863
