A DCS1800/GSM900 RF to digital fully integrated receiver in SiGe 0.35 μm BiCMOS

Author

Belot, Didier ; Bonhoure, Bruno ; Saias, Daniel ; Bertholet, Nicole

Author_Institution

STMicroelectronics, Crolles, France

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

86

Lastpage

89

Abstract

The authors describe a 0.35 μm SiGe BiCMOS RF to digital base band monochip for the DCS1800/GSM900 standard. Linked to this design, a substrate coupling study has been developed in order to prevent a noisy substrate under sensitive analog RF blocks such as Low Noise Amplifiers (LNAs)

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; cellular radio; integrated circuit noise; mixed analogue-digital integrated circuits; radio receivers; semiconductor materials; telecommunication standards; 0.35 micron; 1800 GHz; 900 GHz; BiCMOS RF chip; DCS1800/GSM900 integrated receiver; DCS1800/GSM900 standard; LNA; RFIC; SiGe; SiGe BiCMOS process; fully integrated dual-band receiver; low noise amplifier; sensitive analog RF blocks; substrate coupling; BiCMOS integrated circuits; Distributed control; Germanium silicon alloys; Impedance; Noise figure; Noise measurement; Packaging; Radio frequency; Silicon germanium; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-7019-8

Type

conf

DOI

10.1109/BIPOL.2001.957863

Filename

957863