DocumentCode
1665743
Title
Polar modulators for 1 and 2 GHz power amplifier correction
Author
Nisbet, John
Author_Institution
Stanford Microdevices, Kanata, Ont., Canada
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
94
Lastpage
97
Abstract
Modern RF power amplifiers face increasingly stringent demands on their distortion, cost and power consumption. The use of correction techniques can help, and many of these techniques require polar modulators. Polar modulators are described which operate at 1 GHz and 2 GHz, and allow 20 dB of magnitude variation and 360 deg of phase variation. Shutdown and phase swapping controls are also described. OIP3s are +20 dBm at 1 GHz and +17 dBm at 2 GHz, and group delays are below 2 ns. The parts are implemented in a 65 GHz fT SiGe bipolar process
Keywords
Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; modulators; semiconductor materials; 1 GHz; 2 GHz; 2 ns; 65 GHz; RF power amplifiers; RFIC; SiGe; SiGe bipolar process; phase swapping controls; polar modulators; power amplifier correction; shutdown controls; Bandwidth; Baseband; CMOS logic circuits; Costs; Delay; Phase modulation; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-7019-8
Type
conf
DOI
10.1109/BIPOL.2001.957865
Filename
957865
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