• DocumentCode
    1665743
  • Title

    Polar modulators for 1 and 2 GHz power amplifier correction

  • Author

    Nisbet, John

  • Author_Institution
    Stanford Microdevices, Kanata, Ont., Canada
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    94
  • Lastpage
    97
  • Abstract
    Modern RF power amplifiers face increasingly stringent demands on their distortion, cost and power consumption. The use of correction techniques can help, and many of these techniques require polar modulators. Polar modulators are described which operate at 1 GHz and 2 GHz, and allow 20 dB of magnitude variation and 360 deg of phase variation. Shutdown and phase swapping controls are also described. OIP3s are +20 dBm at 1 GHz and +17 dBm at 2 GHz, and group delays are below 2 ns. The parts are implemented in a 65 GHz fT SiGe bipolar process
  • Keywords
    Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; modulators; semiconductor materials; 1 GHz; 2 GHz; 2 ns; 65 GHz; RF power amplifiers; RFIC; SiGe; SiGe bipolar process; phase swapping controls; polar modulators; power amplifier correction; shutdown controls; Bandwidth; Baseband; CMOS logic circuits; Costs; Delay; Phase modulation; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-7019-8
  • Type

    conf

  • DOI
    10.1109/BIPOL.2001.957865
  • Filename
    957865