Title :
Polar modulators for 1 and 2 GHz power amplifier correction
Author_Institution :
Stanford Microdevices, Kanata, Ont., Canada
fDate :
6/23/1905 12:00:00 AM
Abstract :
Modern RF power amplifiers face increasingly stringent demands on their distortion, cost and power consumption. The use of correction techniques can help, and many of these techniques require polar modulators. Polar modulators are described which operate at 1 GHz and 2 GHz, and allow 20 dB of magnitude variation and 360 deg of phase variation. Shutdown and phase swapping controls are also described. OIP3s are +20 dBm at 1 GHz and +17 dBm at 2 GHz, and group delays are below 2 ns. The parts are implemented in a 65 GHz fT SiGe bipolar process
Keywords :
Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; modulators; semiconductor materials; 1 GHz; 2 GHz; 2 ns; 65 GHz; RF power amplifiers; RFIC; SiGe; SiGe bipolar process; phase swapping controls; polar modulators; power amplifier correction; shutdown controls; Bandwidth; Baseband; CMOS logic circuits; Costs; Delay; Phase modulation; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Switches;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957865
