• DocumentCode
    1665772
  • Title

    Thermal resistance in Si1-xGex HBTs on bulk-Si and SOI substrates

  • Author

    Palestri, P. ; Pacelli, A. ; Mastrapasqua, M.

  • Author_Institution
    Agere Syst., Murray Hill, NJ, USA
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    98
  • Lastpage
    101
  • Abstract
    We present a characterization of self-heating in a 0.25 μm SiGe BiCMOS technology on bulk and SOI substrates. Measurements are compared with analytical models and simulations. Thermal coupling between emitter fingers and effect of metallization are also analyzed
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; semiconductor device metallisation; semiconductor materials; silicon-on-insulator; thermal resistance; 0.25 micron; BiCMOS technology; SOI substrate; Si; Si1-xGex HBT; SiGe; bulk Si substrate; emitter fingers; metallization; self-heating; thermal coupling; thermal resistance; Electrical resistance measurement; Fingers; Heterojunction bipolar transistors; Power dissipation; Silicon; Surface resistance; Temperature; Thermal conductivity; Thermal resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-7019-8
  • Type

    conf

  • DOI
    10.1109/BIPOL.2001.957866
  • Filename
    957866
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1665772