Title :
Development of a high voltage deep trench environment for a Smart Power Technology
Author :
Knaipp, Martin ; Stueckler, Ewald ; Bissmann, Werner
Author_Institution :
Austriamicrosystems, Styria, Austria
Abstract :
This paper describes a deep trench module development for a smart power technology by introducing a lateral dielectric isolation. The approach to introduce the new isolation type in a modular way has impact on the process development and the layout environment. The work describes the advantages and the limitations of the new isolation type which results in a new way of product layouting.
Keywords :
integrated circuit layout; isolation technology; power integrated circuits; CMOS; high voltage IC; high voltage deep trench environment; lateral dielectric isolation; lateral smart power trench isolation; product layouting; smart power technology; CMOS technology; Dielectric substrates; Dielectrics and electrical insulation; Etching; Isolation technology; Leakage current; Robustness; Silicon; Uniform resource locators; Voltage; High Voltage IC´s 2; Insulation 3; Smart Power 1;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
