Title :
Transit time parameter extraction for the HICUM bipolar compact model
Author :
Ardouin, B. ; Zimmer, T. ; Berger, D. ; Celi, D. ; Mnif, H. ; Burdeau, T. ; Fouillat, P.
Author_Institution :
Lab. de Microelectronique, Bordeaux I Univ., Talence, France
fDate :
6/23/1905 12:00:00 AM
Abstract :
This paper presents a extraction procedure for the transit time parameters of the HICUM bipolar compact model. The extraction routines use as input the measured small-signal current gain in the -20 dB/decade falloff region as a function of the collector current and the collector-emitter (or collector-base) voltage. All HICUM transit time parameters are extracted in a straightforward manner, no optimisation is necessary. Especially the critical current value ICK is determined in a self consistent way
Keywords :
bipolar transistors; semiconductor device models; HICUM bipolar compact model; bipolar transistor; critical current; small-signal current gain; transit time parameter extraction; Critical current; Current measurement; Equations; Frequency measurement; Gain measurement; Microelectronics; Parameter extraction; Silicon germanium; Space charge; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957868
