Title :
RF noise models for bipolar transistors - a critical comparison
Author :
Aufinger, K. ; Reisch, M.
Author_Institution :
Infineon Technol. AG, Munich, Germany
fDate :
6/23/1905 12:00:00 AM
Abstract :
In this paper the widely used analytical model equations of Hawkins (1977), van der Ziel and Bosman (1984), Herzel and Heineman (1995), and of Voinigescu et al. (1997), for minimum noise figure of bipolar transistors are compared. It is shown that the latter two do not agree with the older expressions, even in the limit of low frequencies. The reasons and consequences of the found discrepancies are discussed
Keywords :
bipolar transistors; semiconductor device models; semiconductor device noise; RF noise model; analytical model; bipolar transistor; minimum noise figure; Analytical models; Bipolar transistors; Capacitance; Circuit noise; Equations; Equivalent circuits; Integrated circuit noise; Noise figure; Radio frequency; Thermal resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957869
