• DocumentCode
    1665838
  • Title

    RF noise models for bipolar transistors - a critical comparison

  • Author

    Aufinger, K. ; Reisch, M.

  • Author_Institution
    Infineon Technol. AG, Munich, Germany
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    110
  • Lastpage
    113
  • Abstract
    In this paper the widely used analytical model equations of Hawkins (1977), van der Ziel and Bosman (1984), Herzel and Heineman (1995), and of Voinigescu et al. (1997), for minimum noise figure of bipolar transistors are compared. It is shown that the latter two do not agree with the older expressions, even in the limit of low frequencies. The reasons and consequences of the found discrepancies are discussed
  • Keywords
    bipolar transistors; semiconductor device models; semiconductor device noise; RF noise model; analytical model; bipolar transistor; minimum noise figure; Analytical models; Bipolar transistors; Capacitance; Circuit noise; Equations; Equivalent circuits; Integrated circuit noise; Noise figure; Radio frequency; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-7019-8
  • Type

    conf

  • DOI
    10.1109/BIPOL.2001.957869
  • Filename
    957869
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1665838