Direct method for bipolar base-emitter and base-collector capacitance splitting using high frequency measurements

Author

Ardouin, B. ; Zimmer, T. ; Mnif, H. ; Fouillat, P.

Author_Institution

Lab. de Microelectronique IXL, Univ. of Bordeaux I, Talence, France

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

114

Lastpage

117

Abstract

This paper presents a new method based on HF measurements to determine the intrinsic and extrinsic base-emitter and base-collector junction capacitances parameters of bipolar transistors. After measuring the total junction capacitance, this method describes how to split the value between an intrinsic (C_ji) and an extrinsic (C_jx) part versus bias. From the resulting capacitance voltage behaviour, C_ji(V) and C_jx(V), the capacitance specific model parameters (C_j0, V_j, γ₁) can be extracted for the intrinsic as well as for extrinsic part. The results can be introduced in recent compact bipolar models such as the HICUM or MEXTRAM model

Keywords

bipolar transistors; capacitance; p-n junctions; semiconductor device measurement; semiconductor device models; HF measurements; HICUM model; MEXTRAM model; base-collector junction capacitances parameters; base-emitter junction capacitances parameters; bipolar transistors; capacitance-voltage behaviour; compact bipolar models; direct method; extrinsic junction capacitances parameters; high frequency measurements; intrinsic junction capacitances parameters; Bipolar transistors; Capacitance measurement; Capacitance-voltage characteristics; Differential equations; Electric resistance; Electric variables measurement; Frequency measurement; Hafnium; Implants; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-7019-8

Type

conf

DOI

10.1109/BIPOL.2001.957870

Filename

957870