A 6b 10MS/s current-steering DAC manufactured with amorphous Gallium-Indium-Zinc-Oxide TFTs achieving SFDR > 30dB up to 300kHz

Amorphous Gallium-lndium-Zinc-Oxide (GIZO or IGZO) has been recently pro- posed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (μ~20cm7Vs), superior to other common materials for large-area elec- tronics like organic semiconductors and a-Si (μ~1cm7Vs). The amorphous nature of GIZO grants also a good uniformity, contrary to Low Temperature Polycrystalline Silicon (LTPS), which still offers the best mobility among large- area TFT technologies (μ~100cm2Λ/s). The optical transparency and the relative- ly low fabrication temperature (<;150°C) make this technology especially suitable for display backplanes and relative driving electronics [2], as well as for any kind of large-area applications on plastic foils, e.g. biomedical sensors, non-volatile memories [3], RFIDs [4], etc.