DocumentCode
1666034
Title
A 0.18 μm BiCMOS technology featuring 120/100 GHz (fT/fmax) HBT and ASIC-compatible CMOS using copper interconnect
Author
Joseph, A. ; Coolbaugh, D. ; Zierak, M. ; Wuthrich, R. ; Geiss, P. ; He, Z. ; Liu, X. ; Orner, B. ; Johnson, J. ; Freeman, G. ; Ahlgren, D. ; Jagannathan, B. ; Lanzerotti, L. ; Ramachandran, V. ; Malinowski, J. ; Chen, H. ; Chu, J. ; Gray, P. ; Johnson, R
Author_Institution
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
143
Lastpage
146
Abstract
A BiCMOS technology is presented that integrates a high performance NPN (fT=120 GHz and fmax=100 GHz), ASIC compatible 0.11 μm Leff CMOS, and a full suite of passive elements. Significant HBT performance enhancement compared to previously published results has been achieved through further collector and base profile optimization guided by process and device simulations. Base transit time reduction was achieved by simultaneously increasing the Ge ramp and by limiting the base diffusion with the addition of carbon doping to SiGe epitaxial base. This paper describes IBM´s next generation SiGe BiCMOS production technology targeted at the communications market
Keywords
BiCMOS integrated circuits; Ge-Si alloys; application specific integrated circuits; heterojunction bipolar transistors; high-speed integrated circuits; integrated circuit interconnections; integrated circuit technology; semiconductor device models; semiconductor materials; semiconductor process modelling; 0.11 micron; 0.18 micron; 100 GHz; 120 GHz; 120/100 GHz HBT; ASIC-compatible CMOS; Cu; Ge ramp; HBT performance enhancement; IBM next generation SiGe BiCMOS production technology; SiGe; SiGe BiCMOS technology; SiGe:C; SiGe:C epitaxial base; base diffusion; base profile optimization; base transit time reduction; carbon doping; collector profile optimization; communications market; copper interconnect; device simulation; high performance NPN; passive elements; process simulation; BiCMOS integrated circuits; Boron; CMOS process; CMOS technology; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Resistors; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-7019-8
Type
conf
DOI
10.1109/BIPOL.2001.957877
Filename
957877
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