0.18 μm SiGe BiCMOS technology for wireless and 40 Gb/s communication products

Author

Schuegraf, Klaus ; Racanelli, Marco ; Kalburge, Amol ; Shen, Bruce ; Hu, Chun ; Chapek, David ; Howard, David ; Quon, David ; Feiler, David ; Dornisch, Dieter ; U´Ren, Greg ; Abdul-Ridha, Hadi ; Zheng, Jie ; Zhang, Jinshu ; Bell, Ken ; Ring, Ken ; Yin, Ke

Author_Institution

Silicon RF Platform, Conexant Syst., Newport Beach, CA, USA

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

147

Lastpage

150

Abstract

A 0.18 μm SiGe BiCMOS process optimized for wireless and 40 Gb/s networking applications is described. Bipolar performance of 130 GHz (F_t) and 150 GHz (F_max) is reported. Exceptional LNA characteristics have been measured with 2.5 GHz NF_min of 0.83 dB and MAG of 19.7 dB drawing only 1.5 mA of collector current. A metal thin-film resistor, metal-insulator-metal capacitor and two layers of thick Cu help provide low-loss passive components

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; integrated circuit interconnections; integrated circuit technology; optical communication equipment; optical fibre networks; semiconductor materials; 0.18 micron; 0.83 dB; 1.5 mA; 130 GHz; 150 GHz; 19.7 dB; 2.5 GHz; 40 Gb/s networking applications; 40 Gbit/s; Cu; LNA characteristics; SiGe BiCMOS technology; bipolar performance; collector current; low-loss passive components; metal thin-film resistor; metal-insulator-metal capacitor; thick Cu layers; wireless communication; BiCMOS integrated circuits; CMOS process; Capacitance; Copper; Electromigration; Germanium silicon alloys; Implants; Inductors; Resistors; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-7019-8

Type

conf

DOI

10.1109/BIPOL.2001.957878

Filename

957878