Title :
A 0.18 μm SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applications
Author :
Kirchgessner, J. ; Bigelow, S. ; Chai, F.K. ; Cross, R. ; Dahl, P. ; Duvallet, A. ; Gardner, B. ; Griswold, M. ; Hammock, D. ; Heddleson, J. ; Hildreth, S. ; Irudayam, A. ; Lesher, C. ; Meixner, T. ; Meng, P. ; Menner, M. ; McGinley, J. ; Monk, D. ; Morga
Author_Institution :
Digital DNA Labs., Motorola Inc., Mesa, AZ, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
A fully modular 0.18 μm SiGe:C RFBiCMOS technology is described which has been developed for wireless and gigabit optical communication applications. This technology is based upon a 0.18 μm low-power CMOS platform with dual gate oxide MOS devices and 5 layers of Cu metallization. Low Vt CMOS, isolated NMOS, analog BJT and high quality passive devices are integrated for mixed signal and RFCMOS design capability. In addition, a SiGe:C HBT device is integrated for high frequency, low power and low noise RFBiCMOS applications. This technology is supported by digital and analog libraries including 1/f noise & matching characterization, parasitic extraction and memory compilation to fully enable complex mixed-signal system designs
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; carbon; heterojunction bipolar transistors; integrated circuit metallisation; integrated circuit technology; mixed analogue-digital integrated circuits; optical communication equipment; semiconductor device noise; semiconductor materials; 0.18 micron; 1/f noise; Cu; Cu metallization; SiGe:C; SiGe:C HBT device; SiGe:C RF BiCMOS technology; analog BJT; analog libraries; complex mixed-signal system designs; digital libraries; dual gate oxide MOS devices; gigabit optical communication; high frequency low power low noise RF BiCMOS; high quality passive devices; isolated NMOS; low-power CMOS platform; matching characterization; memory compilation; mixed signal design; parasitic extraction; wireless communication; CMOS process; CMOS technology; Heterojunction bipolar transistors; Integrated circuit technology; Isolation technology; MOS devices; Metallization; Optical fiber communication; Signal design; Space technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957879
