Title :
A packaged SiGe x2 sub-harmonic mixer for U-NII band applications
Author :
Johnson, Daniel A. ; Raman, Sanjay
Author_Institution :
Integrated Semicond. Bus. Unit, M/A-COM, Roanoke, VA, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
This paper describes a packaged SiGe x2 sub-harmonic mixer (SHM) for use in the Unlicensed National Information Infrastructure (U-NII) bands. The SHM is an active, double-balanced mixer that achieves x2 sub-harmonic mixing through two quadrature (I/Q) driven, stacked Gilbert-cell switching stages. Single-ended-to-differential conversion, buffering and I/Q phase separation of the LO signal are integrated on-chip. The SHM has a measured conversion gain of 9.3 dB, a P1-dB of -15.7 dBm and an 2LO/RF isolation greater than 35 dB at 5.25 GHz. At 5.775 GHz, the conversion gain is 7.7 dB, the P1-dB is -15.0 dBm, and the isolation is greater than 35 dB. The mixer core consumes 9.5 mA from a 5.0 V supply voltage
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; frequency allocation; heterojunction bipolar transistors; microwave mixers; semiconductor materials; 2LO/RF isolation; 5.0 V; 5.15 to 5.35 GHz; 5.25 GHz; 5.725 to 5.825 GHz; 5.775 GHz; 7.7 dB; 9.3 dB; 9.5 mA; CAD layout; I/Q phase separation; SiGe; SiGe BiCMOS technology; U-NII band applications; Unlicensed National Information Infrastructure bands; active double-balanced mixer; buffering; conversion gain; large MIM capacitors; mixer core; packaged SiGe ×2 sub-harmonic mixer; quadrature driven stacked Gilbert-cell switching stages; quadrature separation; single-ended-to-differential conversion; unlicensed frequency spectrum; Costs; Germanium silicon alloys; Image converters; Integrated circuit technology; Mixers; Packaging; Power harmonic filters; Radio frequency; Silicon germanium; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957881
