An RF-MEMS device with a lateral field-emission detector

Author

Yamashita, Kiyotaka ; Sun, Winston ; Kakushima, Kuniyuki ; Fujita, Hideaki ; Toshiyoshi, Hiroshi

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

2005

Firstpage

29

Lastpage

30

Abstract

We propose a new device that utilizes the field-emission effect as a signal-detecting mechanism for RF-MEMS (radio-frequency micro electro mechanical systems) applications. The device consists of a micro electromechanical resonator of BPF (band-pass filter) characteristics and a pair of silicon tips for field-emission, both of which are monolithically integrated by the silicon micromachining technology. The present paper will show a complete set of experimental results on the field-emission current that was controlled by the micromechanical structure, including the latest report on improved fabrication processes for sharper emission tips.

Keywords

band-pass filters; elemental semiconductors; field emission; micromachining; micromechanical resonators; monolithic integrated circuits; radiofrequency integrated circuits; silicon; RF-MEMS device; band-pass filter; field-emission current; lateral field-emission detector; microelectromechanical resonator; micromachining; monolithically integration; radio-frequency microelectromechanical system; Anodes; Band pass filters; Electron beams; Fabrication; Frequency; Micromechanical devices; Parasitic capacitance; Radiofrequency microelectromechanical systems; Silicon; Voltage; Field Emission; Micro-oscillator; RF-MEMS;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2005.1619468

Filename

1619468