A static and dynamic model for a silicon carbide power MOSFET

Static C-V and I-V characteristics related dynamic behaviors of power MOSFET. Models for Si power MOSFET have already been obtained through the previous studies. Based on the model, a model for SiC power MOSFET is proposed that includes the physics of semiconductor, physical structures of the device, and extracted parameters from the measured C-V characteristics. The static I-V characteristics are also discussed with the C-V characteristics. It is clearly shown that the simulated results in switching behavior of the proposed model coincide with experimental results suitably in some conditions.