Title :
Silicon nanophotonic mid-IR optical modulator
Author :
Van Camp, M.A. ; Assefa, S. ; Gill, D.M. ; Barwicz, T. ; Shank, S.M. ; Vlasov, Y.A. ; Green, W.M.J.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We demonstrate the first mid-IR silicon nanophotonic modulator, with a bitrate of 3Gbps. Our results show that similar design methodologies can be applied to silicon mid-IR active devices as for telecom devices.
Keywords :
elemental semiconductors; nanophotonics; optical communication equipment; optical design techniques; optical modulation; silicon; Si; bit rate 3 Gbit/s; design method; midinfrared active devices; nanophotonic midinfrared optical modulator; telecommunication device; Fiber nonlinear optics; High speed optical techniques; Modulation; Optical fibers; Silicon;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
