Constriction of ferromagnetic patterned thin film by AFM scratch lithography

Author

Jang, Kyungmin ; Ishibashi, Yoshifumi ; Iwata, Daisuke ; Suganuma, Hidenori ; Yamada, Tsutomu ; Takemura, Yasushi

Author_Institution

Dept. of Electr. & Comput. Eng., Yokohama Nat. Univ., Yokohama, Japan

fYear

2010

Firstpage

482

Lastpage

483

Abstract

Nanofabrication using atomic force microscope (AFM) has attracted high attention as a technique fabricating nanoscale structures. In order to obtain nanostructures and devices, resist scratch lithography and direct scratch lithography were performed using AFM scratch lithography with scanning parameters of applied force and scan speed. The nanoconstriction which has 139 nm width and 3.0 Ã— 10² nm² cross-sectional area was fabricated on NiFe thin film using direct scratch lithography successfully.

Keywords

atomic force microscopy; ferromagnetic materials; iron alloys; nanolithography; nanopatterning; nickel alloys; AFM scratch lithography; NiFe; atomic force microscopy; direct scratch lithography; ferromagnetic patterned thin film; nanoconstriction; nanofabrication; resist scratch lithography; thin film constriction; Atomic force microscopy; Lithography; Magnetic devices; Magnetic domain walls; Magnetoresistance; Nanoscale devices; Nanostructures; Resists; Size control; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424871

Filename

5424871