Title :
Strained Ge1-xSnx thin film on Ge (100) with low temperature Ge buffer layer
Author :
Yu, I.S. ; Wu, K.Y. ; Wang, K.Y. ; Wu, T.H. ; Cheng, H.H. ; Ulyanov, V. ; Mashanov, V.I. ; Pchelyakov, O.P.
Author_Institution :
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Alloys of germanium (Ge) and tin (Sn) get much research attention because of possible direct band gap semiconductors. In this paper, we report the growth of Ge1-xSnx thin film deposited on Ge (100) with different Sn compositions ranging from 4% to 20% by Molecular Beam Epitaxy (MBE). Different experimental techniques are employed to characterize the film including, Transmission Electron Microscopy (TEM), X-ray Diffraction (XRD), and Raman scattering measurement. From the analysis, it shows that high quality film can be obtained which is desired for optoelectronic devices.
Keywords :
Raman spectra; X-ray diffraction; buffer layers; germanium compounds; internal stresses; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; transmission electron microscopy; Ge; Ge (100) substrate; Ge1-xSnx; MBE growth; Raman scattering; TEM; X-ray diffraction; XRD; buffer layer; direct band gap semiconductor; germanium-tin alloy; molecular beam epitaxy; strained thin film; transmission electron microscopy; Germanium alloys; Molecular beam epitaxial growth; Photonic band gap; Semiconductor films; Semiconductor thin films; Sputtering; Tin alloys; Transmission electron microscopy; X-ray diffraction; X-ray scattering;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424874
