Title :
A 0.016mm2 144μW three-stage amplifier capable of driving 1-to-15nF capacitive load with >0.95MHz GBW
Author :
Yan, Zushu ; Mak, Pui-In ; Law, Man-Kay ; Martins, Rui
Author_Institution :
Univ. of Macau, Macau, China
Abstract :
High-color-depth LCD drivers require nF-range capacitors as the charge reservoirs to handle the glitch energy during the conversion of the DAC [1]. The reference buffers based on multi-stage amplifiers can enhance the precision under low-voltage supplies, but are exposed to instability when loaded by such large capacitive loads (CL). Frequency compensation via damping-factor control [2] is capable of extending the CL-drivability up to 1nF, however, at the cost of penalizing the power (426μW) and area (0.14mm2). Although recent works [3-4] have enhanced gain-bandwidth product (GBW) and slew rate (SR) showing better FOMS (=GBW·CL/Power) and FOML (=SR·CL/Power), the CL-drivability has not been improved (i.e., 0.8nF in [3] and 0.15nF in [4]). This paper describes a three-stage amplifier managed to afford particularly large and wide range of CL (1 to 15nF) with optimized power (144μW) and die size (0.016mm2), being very suitable for compact LCD drivers [5] with different resolution targets. The design barriers are methodically surmounted via local feedback loop (LFL) analysis expanded from [6], which is an insightful control-centric method. Measured at 15nF CL, the attained FOMS (FOML) is >;4.48× (>;2.55×) beyond that of the state-of-the-art (Fig. 21.6.1).
Keywords :
amplifiers; buffer circuits; driver circuits; CL-drivability; capacitance 1 nF to 15 nF; capacitive loads; charge reservoirs; damping-factor control; frequency compensation; gain-bandwidth product; glitch energy; high-color-depth LCD drivers; insightful control-centric method; local feedback loop; low-voltage supplies; multistage amplifiers; nF-range capacitors; power 144 muW; power 426 muW; reference buffers; slew rate; three-stage amplifier; Circuit stability; Conferences; Feedback loop; Impedance; Solid state circuits; Stability analysis; Strontium;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-0376-7
DOI :
10.1109/ISSCC.2012.6177044