Theoretical observation of two state lasing from InAs/InP quantum-dash lasers

Author

Khan, M.Z.M. ; Ng, Tien K. ; Schwingenschlogl, U. ; Ooi, Boon S.

Author_Institution

Div. of Phys. Sci. & Eng., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia

fYear

2011

Firstpage

149

Lastpage

150

Abstract

The effect of cavity length on the lasing wavelength of InAs/InP quantum dash (Qdash) laser is examined using the carrier-photon rate equation model including the carrier relaxation process from the Qdash ground state and excited state. Both, homogeneous and inhomogeneous broadening has been incorporated in the model. We show that ground state lasing occurs with longer cavity lasers and excited state lasing occurs from relatively short cavity lasers.

Keywords

III-V semiconductors; carrier relaxation time; excited states; ground states; indium compounds; laser cavity resonators; quantum dash lasers; InAs-InP; carrier photon rate equation model; carrier relaxation; cavity lasers; excited state lasing; ground state lasing; homogeneous broadening; inhomogeneous broadening; lasing wavelength; quantum dash lasers; two state lasing; Cavity resonators; Indium phosphide; Laser excitation; Laser modes; Laser theory; Mathematical model; Quantum dot lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on

Conference_Location

Rome

ISSN

2158-3234

Print_ISBN

978-1-61284-876-1

Electronic_ISBN

2158-3234

Type

conf

DOI

10.1109/NUSOD.2011.6041186

Filename

6041186