Title :
Theoretical observation of two state lasing from InAs/InP quantum-dash lasers
Author :
Khan, M.Z.M. ; Ng, Tien K. ; Schwingenschlogl, U. ; Ooi, Boon S.
Author_Institution :
Div. of Phys. Sci. & Eng., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
Abstract :
The effect of cavity length on the lasing wavelength of InAs/InP quantum dash (Qdash) laser is examined using the carrier-photon rate equation model including the carrier relaxation process from the Qdash ground state and excited state. Both, homogeneous and inhomogeneous broadening has been incorporated in the model. We show that ground state lasing occurs with longer cavity lasers and excited state lasing occurs from relatively short cavity lasers.
Keywords :
III-V semiconductors; carrier relaxation time; excited states; ground states; indium compounds; laser cavity resonators; quantum dash lasers; InAs-InP; carrier photon rate equation model; carrier relaxation; cavity lasers; excited state lasing; ground state lasing; homogeneous broadening; inhomogeneous broadening; lasing wavelength; quantum dash lasers; two state lasing; Cavity resonators; Indium phosphide; Laser excitation; Laser modes; Laser theory; Mathematical model; Quantum dot lasers;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-61284-876-1
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2011.6041186
