DocumentCode
1666517
Title
X-ray imaging detector silicon field emission tip array energy conversion
Author
Wang, Yu ; Hunt, Charles E. ; Diawara, Yacouba ; Thorson, Timothy
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
fYear
2005
Firstpage
52
Lastpage
53
Abstract
We present here an X-ray detector based on Si field-emission tip technology. The X-ray is first converted to EHPs in the substrate Si The electrons are emitted into vacuum from spatially-distinct nanoscale field emission tips fabricated on the back-side of the conversion layer, and detected using an imaging multi-channel plate (MCP).
Keywords
X-ray detection; X-ray imaging; electron field emission; elemental semiconductors; photon counting; silicon; Si; X-ray imaging detector; conversion layer; field emission tip array energy conversion; imaging multichannel plate; nanoscale field emission tips; Dynamic range; Energy conversion; Energy resolution; Image converters; Photonics; Sensor arrays; Silicon; X-ray detection; X-ray detectors; X-ray imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
Print_ISBN
0-7803-8397-4
Type
conf
DOI
10.1109/IVNC.2005.1619480
Filename
1619480
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