DocumentCode
1666560
Title
A 0.55V 61dB-SNR 67dB-SFDR 7MHz 4th-order Butterworth filter using ring-oscillator-based integrators in 90nm CMOS
Author
Drost, Brian ; Talegaonkar, Mrunmay ; Hanumolu, Pavan Kumar
Author_Institution
Silicon Labs., Corvallis, OR, USA
fYear
2012
Firstpage
360
Lastpage
362
Abstract
Integrators are key building blocks in many analog signal processing circuits and systems. They are typically implemented using either an opamp-RC or a Gm-C architecture depending on bandwidth and linearity requirements. The performance of both these topologies depends on the operational transconductance amplifier (OTA) used to implement the integrator. Reduced supply voltage and lower transistor output impedance make it difficult to implement high-gain wide-bandwidth OTAs in a power-efficient manner. Consequently, the DC gain of the integrator is often severely limited when designed in deep-submicron CMOS processes. Conventional integrators employ multi-stage OTAs operating in weak inversion and forward body biasing to achieve large DC gain at low supply voltages [1]. These techniques require automatic biasing to guarantee robust operation under all conditions and the use of frequency compensation combined with large dimensions needed to bias the transistors in weak inversion severely limits the bandwidth and increases power dissipation. In this paper, we propose a ring-oscillator-based integrator (ROI) that seeks to overcome the limitations of conventional OTA-based integrators.
Keywords
Butterworth filters; CMOS analogue integrated circuits; electric impedance; operational amplifiers; oscillators; transistor circuits; 4th-order Butterworth filter; DC gain; OTA-based integrator; ROI; automatic biasing; deep-submicron CMOS process; forward body biasing; frequency 7 MHz; frequency compensation; high-gain wide-bandwidth OTA; multistage OTA; noise figure 61 dB; noise figure 67 dB; operational transconductance amplifier; power dissipation; reduced supply voltage; ring-oscillator-based integrator; size 90 nm; transistor output impedance; voltage 0.55 V; Bandwidth; Charge pumps; Current measurement; Linearity; Low pass filters; Pulse width modulation; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4673-0376-7
Type
conf
DOI
10.1109/ISSCC.2012.6177051
Filename
6177051
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