DocumentCode
1666608
Title
Fianite in electronics and photonics
Author
Buzynin, A.N. ; Osiko, V.V. ; Buzynin, Yu.N. ; Drozdov, M.N. ; Lomonova, E.E. ; Khrykin, O.I. ; Trishenkov, M.A. ; Zvonkov, B.N.
Author_Institution
A.M.Prokhorov Gen. Phys. Inst., Russian Acad. of Sci., Moscow, Russia
fYear
2010
Firstpage
1307
Lastpage
1308
Abstract
Many of conventional dielectric materials already exhausted their resources for electronics. For instance, based on Si/SiO2/Si devices approached to their physical limits. Therefore further progress in this area is connected with application of new materials. Fianite, or yttria-stabilized zirconia (hafnia) (YSZ (H)), having unique combination of physical and chemical properties, is multifunctional material for new technologies. It can be used in nanoelectronic and nanophotonic as: monolithic substrate and buffer layers for Si and III-V epitaxy; gate dielectric; alternative to SiO2 isolating layer; protective layer. Some possibilities of application of fianite in these directions are investigated in the present article.
Keywords
III-V semiconductors; aluminium compounds; arsenic compounds; dielectric thin films; epitaxial layers; gallium arsenide; gallium compounds; indium compounds; nanoelectronics; nanophotonics; optical films; optical materials; photodetectors; protective coatings; semiconductor epitaxial layers; silicon; silicon compounds; solar cells; transparency; wide band gap semiconductors; yttrium compounds; zirconium compounds; AlxGa1-xAs; AlGaAs-InGaAs-GaAs; GaAs1-xN; GaN; III-V epitaxy; InxGa1-xAs; InAs; Y2O3-ZrO2; Y2O3-ZrO2-GaAs; Y2O3-ZrO2-Si; buffer layers; dielectric materials; fianite; gate dielectrics; hafnia; isolating layer; monolithic substrate; multifunctional material; nanoelectronics; nanophotonics; protective layer; yttria-stabilized zirconia; Buffer layers; Dielectric materials; Dielectric substrates; Gallium arsenide; Germanium; III-V semiconductor materials; PHEMTs; Photodetectors; Photonics; Protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424885
Filename
5424885
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