High current density carbon nanotube FEAs grown by DC plasma CVD

High currents from carbon nanotubes grown inside arrays of gated silicon posts are measured using a DC plasma CVD reactor. The arrays occupying ∼0.1 mm² area typically delivered at least 100 μA total current to an anode, with similar currents intercepted by the gate. Currents in excess of 100 μA could be sustained for many hours with short term fluctuations below 1%. Several arrays delivered roughly 1 mA. The highest currents (equivalent to 1 A/cm²) occurred at gate potentials near 60 V, giving transconductance values exceeding 100 μS or 100 mS/cm².