Title :
High current/high current density carbon nanotube cold cathodes
Author :
Minoux, E. ; Vincent, Pierre ; Hudanski, L. ; Schnell, J.-P. ; Legagneux, Pierre ; Teo, K.B.K. ; Gangloff, L. ; Lacerda, R. ; Chhowalla, M. ; Hasko, D.G. ; Ahmed, Hameeza ; Amaratunga, G.A.J. ; Milne, W.I.
Author_Institution :
Thales Res. & Technol., France
Abstract :
Field emission measurements on individual carbon nanotubes grown by dc plasma CVD at 700°C have been performed with a high resolution scanning anode field emission microscope. I-V characteristics of as-grown CNs show a saturation for currents above 1 μA and the maximum emission current is in the range 5-10 μA. This saturation is attributed to a bad CN/substrate contact. By improving this electric contact by thermal annealing at 950°C, the saturation is suppressed. To improve emission current density, the effect of CN density on maximum emission current is studied. For this purpose, 0.5 × 0.5 mm2 arrays of vertically aligned CNs with a 1.5 μm height, a 15 nm diameter and a 3 μm spacing are grown. The CN density is 107 cm-2. CNs exhibit almost the same aspect ratio [200] but the CN density is increased by a factor of 10. From such an array, an emission current of 10 mA corresponding to a current density of 4 A cm-2 is measured.
Keywords :
annealing; carbon nanotubes; electron field emission; vacuum microelectronics; C; I-V characteristics; carbon nanotube; carbon nanotube density; cold cathodes; dc plasma CVD; electric contact; emission current density; field emission; high resolution scanning anode field emission microscope; maximum emission current; thermal annealing; Annealing; Anodes; Carbon nanotubes; Cathodes; Current density; Microscopy; Performance evaluation; Plasma density; Plasma measurements; Plasma properties;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2005.1619489