Title :
Comparison of continuum and atomistic methods for the analysis of InAs/GaAs quantum dots
Author :
Barettin, Daniele ; Pecchia, Alessandro ; Penazzi, Gabriele ; Der Maur, Matthias Auf ; Lassen, Benny ; Willatzen, Morten ; Carlo, Aldo Di
Author_Institution :
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
Abstract :
We present a comparison of continuum k · p and atomistic empirical Tight Binding methods for the analysis of the optoelectronic properties of InAs/GaAs quantum dots.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; tight-binding calculations; InAs-GaAs; atomistic methods; continuum methods; optoelectronic properties; quantum dots; tight binding methods; Adaptive optics; Computational modeling; Gallium arsenide; Stationary state; Strain; Wave functions;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-61284-876-1
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2011.6041203
