Low resistivity efficient passivated silicon solar cells

Author

Shi, Jiqun ; Li, Ning ; Ma, Zhiyao ; Ou, Hanan

Author_Institution

Dept. of Solid State Electron., Huazhong Univ. of Sci. & Technol., Wuhan, China

fYear

1995

Firstpage

160

Lastpage

162

Abstract

Since 1983, surface passivation combined with other technology has so successfully been used for MINP, PESC, PERC and PERL, that they formed a new family of solar cell named passivated silicon solar cells. Their conversion efficiency broke through 18% barrier (AM1.5) in 1983 and reached values of 23~24% (AM1.5) in 1990 representing leading results in the area of low resistivity silicon solar cells. In this paper, results of passivated silicon solar cells are introduced. Structures and main features of MINP, PESC PERC and PERL solar cells are presented and analysed respectively

Keywords

MIS devices; elemental semiconductors; passivation; silicon; solar cells; 18 to 24 percent; AM1.5; MINP; PERC; PERL; PESC; Si; conversion efficiency; low resistivity devices; metal-insulator-np junction; passivated emitter and rear cell; passivated emitter rear locally diffused cell; passivated emitter solar cell; solar cells; surface passivation; Alloying; Australia; Conductivity; Gettering; Passivation; Photovoltaic cells; Reflection; Silicon; Solid state circuits; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.499771

Filename

499771