DocumentCode
1666900
Title
Study of a MOS imaging sensor with PIN structure
Author
Huang, Youshu ; Zhu, Weian ; He, Qingyi ; Guolin-Lu ; Lin, Peng
Author_Institution
Opto-Electron Instrum. Inst., Chongqing Univ., China
fYear
1995
Firstpage
163
Lastpage
165
Abstract
We designed and fabricated a new structure of PIN MOS imaging sensor. The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis
Keywords
MIS devices; image sensors; p-i-n photodiodes; photocapacitance; MOS imaging sensor; PIN structure; junction capacitance; photodiodes; responsivity; video capacitance; Capacitance; Charge-coupled image sensors; Circuits; Conductivity; High-resolution imaging; Image sensors; Photodiodes; Sampling methods; Sensor arrays; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.499772
Filename
499772
Link To Document