Title :
An industry perspective on the optimization of InGaN lasers and LEDs via modeling
Author :
Gomez-Iglesias, A. ; Sabathil, M. ; Lermer, T. ; Müller, J. ; Galler, B. ; Eichler, C. ; Avramescu, A. ; Dini, D. ; Pietzonka, I. ; Tautz, S. ; Breidenassel, A. ; Bruederl, G. ; Lell, A. ; Meyer, T. ; Peter, M. ; Lutgen, S. ; Strauss, U. ; Pasenow, B. ; K
Author_Institution :
OSRAM Opto-Semicond. GmbH, Regensburg, Germany
Abstract :
In this paper, we illustrate the role of modeling in the development of commercial nitride-based lasers and LEDs. Aside from optimizing device performance, joint analysis of simulations and experimental results can shed light into the intrinsic properties of the InGaN/GaN material system.
Keywords :
III-V semiconductors; indium compounds; light emitting diodes; semiconductor lasers; wide band gap semiconductors; InGaN-GaN; LED; device performance; intrinsic properties; joint analysis; nitride-based lasers; Current measurement; Gain measurement; Laser modes; Light emitting diodes; Loss measurement; Materials; Waveguide lasers;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-61284-876-1
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2011.6041209
