Title :
On the choice of the optimum silicon substrate for CCD/CMOS technology
Author :
Bellutti, P. ; Boscardin, M. ; Soncini, G. ; Zen, M. ; Zorzi, N.
Author_Institution :
Div. of Microsensors and Syst. Integration, IRST, Trento, Italy
Abstract :
This work reports on the analysis of the experimental data aimed at the developing of a CCD/CMOS process starting from a CCD one. The obtained results allow the selection of an optimized silicon substrate in terms of interstitial oxygen concentration [Oi] and gives additional information on the role of [Oi] on device electrical performances and on processing induced defects
Keywords :
CMOS integrated circuits; VLSI; charge-coupled device circuits; getters; integrated circuit measurement; CCD/CMOS technology; Si; VLSI; device electrical performance; interstitial concentration; optimized substrate; processing induced defects; CMOS technology; Charge coupled devices; Crystallography; Diodes; Fabrication; Gettering; Optical devices; Petroleum; Silicon; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499775
