DocumentCode
1666973
Title
On the choice of the optimum silicon substrate for CCD/CMOS technology
Author
Bellutti, P. ; Boscardin, M. ; Soncini, G. ; Zen, M. ; Zorzi, N.
Author_Institution
Div. of Microsensors and Syst. Integration, IRST, Trento, Italy
fYear
1995
Firstpage
176
Lastpage
178
Abstract
This work reports on the analysis of the experimental data aimed at the developing of a CCD/CMOS process starting from a CCD one. The obtained results allow the selection of an optimized silicon substrate in terms of interstitial oxygen concentration [Oi] and gives additional information on the role of [Oi] on device electrical performances and on processing induced defects
Keywords
CMOS integrated circuits; VLSI; charge-coupled device circuits; getters; integrated circuit measurement; CCD/CMOS technology; Si; VLSI; device electrical performance; interstitial concentration; optimized substrate; processing induced defects; CMOS technology; Charge coupled devices; Crystallography; Diodes; Fabrication; Gettering; Optical devices; Petroleum; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.499775
Filename
499775
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